Технічний опис SIHW040N65E-GE3 Vishay Semiconductors
Description: N-CHANNEL 650V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 391W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Інші пропозиції SIHW040N65E-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHW040N65E-GE3 | Виробник : Vishay Siliconix |
 Description: N-CHANNEL 650VSupplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
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