| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 704.72 грн |
| 10+ | 474.75 грн |
| 100+ | 297.54 грн |
| 480+ | 287.18 грн |
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Технічний опис SIHW040N65E-GE3 Vishay Semiconductors
Description: N-CHANNEL 650V, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 391W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Інші пропозиції SIHW040N65E-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHW040N65E-GE3 | Vishay Siliconix |
 Description: N-CHANNEL 650VSupplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. |
| SIHW040N65E-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: N-CHANNEL 650V
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.