Технічний опис SIHW22N65E-GE3 Vishay
Description: N-CHANNEL 650V, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A, Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 227W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V.
Інші пропозиції SIHW22N65E-GE3
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SIHW22N65E-GE3 | Виробник : Vishay Siliconix |
 Description: N-CHANNEL 650VPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V |
товару немає в наявності |
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SIHW22N65E-GE3 | Виробник : Vishay / Siliconix |
MOSFETs N-CHANNEL 650V |
товару немає в наявності |