SIHW61N65EF-GE3 Vishay Semiconductors
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1048.91 грн |
| 10+ | 918.57 грн |
Відгуки про товар
Написати відгук
Технічний опис SIHW61N65EF-GE3 Vishay Semiconductors
Description: MOSFET N-CH 650V 64A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V.
Інші пропозиції SIHW61N65EF-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHW61N65EF-GE3 | Виробник : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
SIHW61N65EF-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 64A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V |
товару немає в наявності |
|
| SIHW61N65EF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |