SIJ186DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 3000+ | 32.88 грн |
| 6000+ | 30.15 грн |
| 9000+ | 28.76 грн |
Відгуки про товар
Написати відгук
Технічний опис SIJ186DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 23A/79.4A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V.
Інші пропозиції SIJ186DP-T1-GE3 за ціною від 31.56 грн до 79.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIJ186DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 23A/79.4A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V |
на замовлення 11016 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
SIJ186DP-T1-GE3 | Vishay / Siliconix |
MOSFET 60V Vds 20V Vgs PowerPAK SO-8L |
на замовлення 4743 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SIJ186DP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
на замовлення 11016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.34 грн |
| 10+ | 62.64 грн |
| 100+ | 48.71 грн |
| 500+ | 38.75 грн |
| 1000+ | 31.56 грн |
| SIJ186DP-T1-GE3 |
![]() |
Виробник: Vishay / Siliconix
MOSFET 60V Vds 20V Vgs PowerPAK SO-8L
MOSFET 60V Vds 20V Vgs PowerPAK SO-8L
на замовлення 4743 шт:
термін постачання 21-30 дні (днів)



