SIJ470DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 58.8A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 111.87 грн |
| 10+ | 88.07 грн |
| 100+ | 68.47 грн |
| 500+ | 54.46 грн |
| 1000+ | 44.37 грн |
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Технічний опис SIJ470DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 58.8A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIJ470DP-T1-GE3 за ціною від 37.41 грн до 122.51 грн
| Фото | Назва | Виробник | Інформація |
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SIJ470DP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 100V 9.1mOhm@10V 58.8A N-CH |
на замовлення 9731 шт: термін постачання 21-30 дні (днів) |
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SIJ470DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 58.8A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
товару немає в наявності |