SiJ494DP-T1-GE3 Vishay Semiconductors
на замовлення 18000 шт:
термін постачання 1094-1103 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.87 грн |
| 10+ | 96.49 грн |
| 100+ | 65.06 грн |
| 500+ | 55.54 грн |
| 1000+ | 47.21 грн |
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Технічний опис SiJ494DP-T1-GE3 Vishay Semiconductors
Description: VISHAY - SIJ494DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 36.8 A, 0.0193 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150, Dauer-Drainstrom Id: 36.8, hazardous: false, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 69.4, Gate-Source-Schwellenspannung, max.: 4.5, euEccn: NLR, Verlustleistung: 69.4, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8, Produktpalette: ThunderFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0193, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0193, SVHC: No SVHC (19-Jan-2021).
Інші пропозиції SiJ494DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIJ494DP-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 150V 36.8A 5-Pin(4+Tab) PowerPAK SO T/R |
товар відсутній |
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SIJ494DP-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 150V 36.8A 5-Pin(4+Tab) PowerPAK SO T/R |
товар відсутній |
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SIJ494DP-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIJ494DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 36.8 A, 0.0193 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150 Dauer-Drainstrom Id: 36.8 hazardous: false Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 69.4 Gate-Source-Schwellenspannung, max.: 4.5 euEccn: NLR Verlustleistung: 69.4 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: ThunderFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0193 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0193 SVHC: No SVHC (19-Jan-2021) |
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| SIJ494DP-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIJ494DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 36.8 A, 0.0193 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Verlustleistung: 69.4 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0193 Qualifikation: - usEccn: EAR99 SVHC: No SVHC (19-Jan-2021) |
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| SiJ494DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 36.8A Pulsed drain current: 100A Power dissipation: 69.4W Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SiJ494DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 150V 36.8A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc) Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V Power Dissipation (Max): 69.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V |
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SiJ494DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 150V 36.8A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc) Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V Power Dissipation (Max): 69.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V |
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| SiJ494DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 36.8A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 36.8A Pulsed drain current: 100A Power dissipation: 69.4W Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
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