Технічний опис SIJA58DP-T1-GE3 Vishay
Description: MOSFET N-CH 40V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V, Power Dissipation (Max): 27.7W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V.
Інші пропозиції SIJA58DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
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| SIJA58DP-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 109A Pulsed drain current: 150A Power dissipation: 56.8W On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIJA58DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Power Dissipation (Max): 27.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V |
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SIJA58DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Power Dissipation (Max): 27.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V |
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SIJA58DP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8L |
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| SIJA58DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 109A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 109A Pulsed drain current: 150A Power dissipation: 56.8W On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |