| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.93 грн |
| 10+ | 351.69 грн |
| 100+ | 235.41 грн |
| 500+ | 231.95 грн |
| 1000+ | 225.74 грн |
| 2000+ | 219.53 грн |
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Технічний опис SIJH600E-T1-GE3 Vishay Semiconductors
Description: VISHAY - SIJH600E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 373 A, 920 µohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 373A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 333W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK, Anzahl der Pins: 5Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 920µohm.
Інші пропозиції SIJH600E-T1-GE3 за ціною від 215.05 грн до 564.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIJH600E-T1-GE3 | VISHAY |
 Description: VISHAY - SIJH600E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 373 A, 920 µohm, PowerPAK, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 373A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 333W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK Anzahl der Pins: 5Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 920µohm |
на замовлення 607 шт: термін постачання 21-31 дні (днів) |
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SIJH600E-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 2114 шт: термін постачання 21-31 дні (днів) |
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| SIJH600E-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SIJH600E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 373 A, 920 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 373A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 333W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 5Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 920µohm
Description: VISHAY - SIJH600E-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 373 A, 920 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 373A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 333W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 5Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 920µohm
на замовлення 607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 497.74 грн |
| 5+ | 432.50 грн |
| 10+ | 367.26 грн |
| 50+ | 331.31 грн |
| 100+ | 244.38 грн |
| 250+ | 235.41 грн |
| SIJH600E-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
на замовлення 2114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 564.61 грн |
| 10+ | 368.92 грн |
| 100+ | 269.76 грн |
| 500+ | 215.05 грн |