| Кількість | Ціна |
|---|---|
| 1+ | 500.58 грн |
| 10+ | 354.28 грн |
| 100+ | 237.13 грн |
| 500+ | 233.66 грн |
| 1000+ | 227.40 грн |
| 2000+ | 221.14 грн |
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Технічний опис SIJH600E-T1-GE3 Vishay Semiconductors
Description: N-CHANNEL 60-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Інші пропозиції SIJH600E-T1-GE3 за ціною від 216.63 грн до 568.76 грн
| Фото | Назва | Виробник | Інформація |
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SIJH600E-T1-GE3 | Виробник : Vishay Siliconix |
 Description: N-CHANNEL 60-V (D-S) 175C MOSFETInput Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 2114 шт: термін постачання 21-31 дні (днів) |
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SIJH600E-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
товару немає в наявності |