SIJH800E-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 1+ | 341.10 грн |
| 10+ | 275.80 грн |
| 100+ | 223.13 грн |
| 500+ | 186.13 грн |
| 1000+ | 159.38 грн |
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Технічний опис SIJH800E-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Інші пропозиції SIJH800E-T1-GE3 за ціною від 146.73 грн до 385.37 грн
| Фото | Назва | Виробник | Інформація |
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SIJH800E-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs POWRPK N CHAN 80V |
на замовлення 4334 шт: термін постачання 21-30 дні (днів) |
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SIJH800E-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
товару немає в наявності |