SIR106ADP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 48.31 грн |
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Технічний опис SIR106ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK, Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V.
Інші пропозиції SIR106ADP-T1-RE3 за ціною від 48.47 грн до 183.36 грн
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SIR106ADP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V |
на замовлення 6653 шт: термін постачання 21-31 дні (днів) |
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SIR106ADP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 100V PowerPAK SO-8 |
на замовлення 25433 шт: термін постачання 21-30 дні (днів) |
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