SIR106DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 3000+ | 58.09 грн |
| 6000+ | 53.84 грн |
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Технічний опис SIR106DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V.
Інші пропозиції SIR106DP-T1-RE3 за ціною від 45.39 грн до 153.77 грн
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SIR106DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 16.1A PPAK Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 6804 шт: термін постачання 21-31 дні (днів) |
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SIR106DP-T1-RE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 1240 шт: термін постачання 21-30 дні (днів) |
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| SIR106DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 6804 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 128.45 грн |
| 10+ | 103.08 грн |
| 100+ | 82.02 грн |
| 500+ | 65.13 грн |
| 1000+ | 55.26 грн |
| SIR106DP-T1-RE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
на замовлення 1240 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 153.77 грн |
| 10+ | 105.37 грн |
| 100+ | 67.31 грн |
| 500+ | 53.85 грн |
| 1000+ | 50.61 грн |
| 3000+ | 45.39 грн |