SIR108DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 3000+ | 43.05 грн |
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Технічний опис SIR108DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V.
Інші пропозиції SIR108DP-T1-RE3 за ціною від 46.04 грн до 189.03 грн
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SIR108DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 12.4A/45A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 5490 шт: термін постачання 21-31 дні (днів) |
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SIR108DP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 6408 шт: термін постачання 21-30 дні (днів) |
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