SIR108DP-T1-RE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 59.96 грн |
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Технічний опис SIR108DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V.
Інші пропозиції SIR108DP-T1-RE3 за ціною від 49.05 грн до 141.53 грн
| Фото | Назва | Виробник | Інформація |
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SIR108DP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 6574 шт: термін постачання 21-30 дні (днів) |
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SIR108DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 12.4A/45A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SIR108DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 45A; Idm: 80A Kind of package: reel; tape Polarisation: unipolar Case: PowerPAK® SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 41.5nC On-state resistance: 16mΩ Power dissipation: 65.7W Gate-source voltage: ±20V Drain current: 45A Pulsed drain current: 80A Drain-source voltage: 100V кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIR108DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 45A; Idm: 80A Kind of package: reel; tape Polarisation: unipolar Case: PowerPAK® SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 41.5nC On-state resistance: 16mΩ Power dissipation: 65.7W Gate-source voltage: ±20V Drain current: 45A Pulsed drain current: 80A Drain-source voltage: 100V |
товару немає в наявності |