SIR112DP-T1-RE3 Vishay Semiconductors
на замовлення 8900 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 125.87 грн |
| 10+ | 87.78 грн |
| 100+ | 58.27 грн |
| 500+ | 47.85 грн |
| 1000+ | 40.73 грн |
| 3000+ | 37.06 грн |
| 9000+ | 36.77 грн |
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Технічний опис SIR112DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 37.6A/133A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc), Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V.
Інші пропозиції SIR112DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIR112DP-T1-RE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 133A Pulsed drain current: 200A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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SIR112DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 37.6A/133A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V |
товару немає в наявності |
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SIR112DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 37.6A/133A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V |
товару немає в наявності |
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| SIR112DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 133A Pulsed drain current: 200A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |