SIR124DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 3000+ | 31.91 грн |
| 6000+ | 28.59 грн |
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Технічний опис SIR124DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V.
Інші пропозиції SIR124DP-T1-RE3 за ціною від 32.33 грн до 122.51 грн
| Фото | Назва | Виробник | Інформація |
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SIR124DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V |
на замовлення 7453 шт: термін постачання 21-31 дні (днів) |
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SIR124DP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs 80V Vds; 20V Vgs PowerPAK SO-8 |
на замовлення 8783 шт: термін постачання 21-30 дні (днів) |
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| SIR124DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 56.8A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 56.8A Pulsed drain current: 120A Power dissipation: 62.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.3mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |