SIR1309DP-T1-GE3 Vishay Siliconix

Description: P-CHANNEL 30 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).