SIR172ADP-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 30V 24A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.3 грн |
| 10+ | 29.13 грн |
| 100+ | 21.76 грн |
| 500+ | 16.05 грн |
| 1000+ | 12.4 грн |
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Технічний опис SIR172ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 29.8W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V.
Інші пропозиції SIR172ADP-T1-GE3 за ціною від 10.99 грн до 36.52 грн
| Фото | Назва | Виробник | Інформація |
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SIR172ADP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 443 шт: термін постачання 21-30 дні (днів) |
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| SIR172ADP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A Drain-source voltage: 30V Drain current: 24A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 29.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 44nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 3000 шт |
товар відсутній |
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SIR172ADP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 24A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V |
товар відсутній |
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| SIR172ADP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A Drain-source voltage: 30V Drain current: 24A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 29.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 44nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
товар відсутній |