SIR184LDP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SIR184LDP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIR184LDP-T1-RE3 за ціною від 37.69 грн до 144.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIR184LDP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 4082 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
SIR184LDP-T1-RE3 | Vishay Semiconductors |
MOSFETs POWRPK N CHAN 60V |
на замовлення 16661 шт: термін постачання 21-30 дні (днів) |
|
| SIR184LDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 4082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.79 грн |
| 10+ | 85.71 грн |
| 100+ | 58.00 грн |
| 500+ | 43.30 грн |
| 1000+ | 41.02 грн |
| SIR184LDP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
на замовлення 16661 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.17 грн |
| 10+ | 93.68 грн |
| 100+ | 55.78 грн |
| 500+ | 44.87 грн |
| 1000+ | 41.35 грн |
| 3000+ | 37.69 грн |