SIR184LDP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SIR184LDP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 73A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 56.8W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 5400µohm.
Інші пропозиції SIR184LDP-T1-RE3 за ціною від 41.31 грн до 140.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR184LDP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 4082 шт: термін постачання 21-31 дні (днів) |
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SIR184LDP-T1-RE3 | Vishay Semiconductors |
MOSFETs POWRPK N CHAN 60V |
на замовлення 16661 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
 |
SIR184LDP-T1-RE3 | VISHAY |
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 56.8W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5400µohm |
на замовлення 2072 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIR184LDP-T1-RE3 | VISHAY |
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 56.8W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5400µohm |
на замовлення 2072 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIR184LDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 4082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.77 грн |
| 10+ | 86.31 грн |
| 100+ | 58.41 грн |
| 500+ | 43.61 грн |
| 1000+ | 41.31 грн |
| SIR184LDP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
на замовлення 16661 шт:
термін постачання 21-30 дні (днів)
| SIR184LDP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 56.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 56.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
на замовлення 2072 шт:
термін постачання 21-31 дні (днів)
| SIR184LDP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 56.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
Description: VISHAY - SIR184LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 73 A, 5400 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 73A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 56.8W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5400µohm
на замовлення 2072 шт:
термін постачання 21-31 дні (днів)