| Кількість | Ціна |
|---|---|
| 3+ | 127.46 грн |
| 10+ | 94.02 грн |
| 100+ | 55.61 грн |
| 500+ | 44.26 грн |
| 1000+ | 41.37 грн |
| 3000+ | 35.95 грн |
| 6000+ | 35.73 грн |
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Технічний опис SIR188LDP-T1-RE3 Vishay
Description: N-CHANNEL 60-V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIR188LDP-T1-RE3 за ціною від 42.99 грн до 145.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR188LDP-T1-RE3 | Vishay Siliconix |
 Description: N-CHANNEL 60-V (D-S) MOSFET POWEInput Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 3955 шт: термін постачання 21-31 дні (днів) |
|
| SIR188LDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 3955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 145.11 грн |
| 10+ | 89.26 грн |
| 100+ | 60.46 грн |
| 500+ | 45.17 грн |
| 1000+ | 42.99 грн |