SIR4604LDP-T1-GE3 VISHAY
Виробник: VISHAYDescription: VISHAY - SIR4604LDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 51 A, 0.0074 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 51A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 41.6W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0074ohm
SVHC: Lead (07-Nov-2024)
на замовлення 5969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 66.85 грн |
| 500+ | 44.34 грн |
| 1000+ | 36.70 грн |
| 5000+ | 31.33 грн |
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Технічний опис SIR4604LDP-T1-GE3 VISHAY
Description: VISHAY - SIR4604LDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 51 A, 0.0074 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 51A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 41.6W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0074ohm, SVHC: Lead (07-Nov-2024).
Інші пропозиції SIR4604LDP-T1-GE3 за ціною від 31.33 грн до 116.08 грн
| Фото | Назва | Виробник | Інформація |
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SIR4604LDP-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V |
на замовлення 5786 шт: термін постачання 21-31 дні (днів) |
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SIR4604LDP-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIR4604LDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 51 A, 0.0074 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 51A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 41.6W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0074ohm SVHC: Lead (07-Nov-2024) |
на замовлення 5969 шт: термін постачання 21-31 дні (днів) |
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| SIR4604LDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 100A Power dissipation: 41.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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SIR4604LDP-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V |
товару немає в наявності |
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| SIR4604LDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 100A Power dissipation: 41.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |