SIR5110DP-T1-RE3 Vishay / Siliconix
Виробник: Vishay / SiliconixMOSFET N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
на замовлення 5950 шт:
термін постачання 357-366 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 143.85 грн |
| 10+ | 118.16 грн |
| 100+ | 81.46 грн |
| 250+ | 74.86 грн |
| 500+ | 68.25 грн |
| 1000+ | 58.79 грн |
| 3000+ | 55.85 грн |
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Технічний опис SIR5110DP-T1-RE3 Vishay / Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 47.6A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 35A, 10V, Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V.
Інші пропозиції SIR5110DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SIR5110DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 35A, 10V Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
товару немає в наявності |
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SIR5110DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 35A, 10V Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
товару немає в наявності |