SiR5112DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SiR5112DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SiR5112DP-T1-RE3 за ціною від 50.49 грн до 189.81 грн
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SiR5112DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 5941 шт: термін постачання 21-31 дні (днів) |
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SiR5112DP-T1-RE3 | Vishay / Siliconix |
MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V |
на замовлення 3966 шт: термін постачання 21-30 дні (днів) |
|
| SiR5112DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 5941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 125.69 грн |
| 10+ | 100.23 грн |
| 100+ | 79.78 грн |
| 500+ | 63.35 грн |
| 1000+ | 53.75 грн |
| SiR5112DP-T1-RE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
на замовлення 3966 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 189.81 грн |
| 10+ | 121.26 грн |
| 100+ | 71.92 грн |
| 500+ | 57.47 грн |
| 1000+ | 53.35 грн |
| 3000+ | 50.49 грн |