SIR512DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SIR512DP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 96.2W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen V, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 4500µohm, SVHC: Lead (21-Jan-2025).
Інші пропозиції SIR512DP-T1-RE3 за ціною від 70.67 грн до 221.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIR512DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6W (Ta), 96.2W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 |
на замовлення 5666 шт: термін постачання 21-31 дні (днів) |
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SIR512DP-T1-RE3 | Vishay |
MOSFETs SOT669 100V 100A N-CH MOSFET |
на замовлення 6166 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIR512DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 96.2W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4500µohm SVHC: Lead (21-Jan-2025) |
на замовлення 1920 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIR512DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 96.2W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4500µohm SVHC: Lead (21-Jan-2025) |
на замовлення 1920 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIR512DP-T1-RE3 |
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Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
на замовлення 5666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.68 грн |
| 10+ | 138.68 грн |
| 100+ | 96.00 грн |
| 500+ | 72.96 грн |
| 1000+ | 70.67 грн |
| SIR512DP-T1-RE3 |
|
Виробник: Vishay
MOSFETs SOT669 100V 100A N-CH MOSFET
MOSFETs SOT669 100V 100A N-CH MOSFET
на замовлення 6166 шт:
термін постачання 21-30 дні (днів)
| SIR512DP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 96.2W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4500µohm
SVHC: Lead (21-Jan-2025)
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 96.2W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4500µohm
SVHC: Lead (21-Jan-2025)
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)
| SIR512DP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 96.2W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4500µohm
SVHC: Lead (21-Jan-2025)
Description: VISHAY - SIR512DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 4500 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 96.2W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4500µohm
SVHC: Lead (21-Jan-2025)
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)