SIR514DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис SIR514DP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 84.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 83.3W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen V, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 5800µohm.
Інші пропозиції SIR514DP-T1-RE3 за ціною від 53.51 грн до 219.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR514DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 84.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 83.3W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5800µohm |
на замовлення 5205 шт: термін постачання 21-31 дні (днів) |
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SIR514DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
на замовлення 5836 шт: термін постачання 21-31 дні (днів) |
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SIR514DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 84.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 83.3W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5800µohm |
на замовлення 5205 шт: термін постачання 21-31 дні (днів) |
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SIR514DP-T1-RE3 | Vishay |
MOSFETs SOT669 100V 84.8A N-CH MOSFET |
на замовлення 5438 шт: термін постачання 21-30 дні (днів) |
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| SIR514DP-T1-RE3 |
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Виробник: VISHAY
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 84.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 83.3W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5800µohm
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 84.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 83.3W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5800µohm
на замовлення 5205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 78.28 грн |
| 500+ | 60.55 грн |
| 1000+ | 54.76 грн |
| SIR514DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
на замовлення 5836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 79.33 грн |
| 100+ | 63.15 грн |
| 500+ | 53.51 грн |
| SIR514DP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 84.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 83.3W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5800µohm
Description: VISHAY - SIR514DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 84.8 A, 5800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 84.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 83.3W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5800µohm
на замовлення 5205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 175.97 грн |
| 10+ | 114.30 грн |
| 100+ | 78.28 грн |
| 500+ | 60.55 грн |
| 1000+ | 54.76 грн |
| SIR514DP-T1-RE3 |
|
Виробник: Vishay
MOSFETs SOT669 100V 84.8A N-CH MOSFET
MOSFETs SOT669 100V 84.8A N-CH MOSFET
на замовлення 5438 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.55 грн |
| 10+ | 136.98 грн |
| 100+ | 84.58 грн |
| 500+ | 68.51 грн |
| 1000+ | 65.48 грн |
| 3000+ | 61.81 грн |