SIR5708DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SIR5708DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIR5708DP-T1-RE3 за ціною від 37.49 грн до 152.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIR5708DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET POW Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
SIR5708DP-T1-RE3 | Vishay Semiconductors |
MOSFETs SOT669 150V 33.8A N-CH MOSFET |
на замовлення 16277 шт: термін постачання 21-30 дні (днів) |
|
| SIR5708DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.82 грн |
| 10+ | 86.60 грн |
| 100+ | 60.65 грн |
| 500+ | 45.61 грн |
| 1000+ | 41.83 грн |
| SIR5708DP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFETs SOT669 150V 33.8A N-CH MOSFET
MOSFETs SOT669 150V 33.8A N-CH MOSFET
на замовлення 16277 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.22 грн |
| 10+ | 89.71 грн |
| 100+ | 53.92 грн |
| 500+ | 44.32 грн |
| 1000+ | 40.52 грн |
| 3000+ | 37.49 грн |