SIR572DP-T1-RE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 59.7A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V
Power Dissipation (Max): 5.7W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 59.73 грн |
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Технічний опис SIR572DP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR572DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 150 V, 59.7 A, 0.0086 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 59.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 92.5W, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 92.5W, Bauform - Transistor: PowerPAK SO, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0086ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0086ohm, SVHC: To Be Advised.
Інші пропозиції SIR572DP-T1-RE3 за ціною від 58.57 грн до 193.71 грн
| Фото | Назва | Виробник | Інформація |
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SIR572DP-T1-RE3 | Виробник : VISHAY |
Description: VISHAY - SIR572DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 150 V, 59.7 A, 0.0086 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 59.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 92.5W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 92.5W Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0086ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0086ohm SVHC: To Be Advised |
на замовлення 4201 шт: термін постачання 21-31 дні (днів) |
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SIR572DP-T1-RE3 | Виробник : VISHAY |
Description: VISHAY - SIR572DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 150 V, 59.7 A, 0.0086 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 59.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 92.5W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0086ohm SVHC: To Be Advised |
на замовлення 4201 шт: термін постачання 21-31 дні (днів) |
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SIR572DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 59.7A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V Power Dissipation (Max): 5.7W (Ta), 92.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 75 V |
на замовлення 6501 шт: термін постачання 21-31 дні (днів) |
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| SIR572DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 59.7A; Idm: 180A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 59.7A Power dissipation: 92.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 180A кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIR572DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 59.7A; Idm: 180A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 59.7A Power dissipation: 92.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 180A |
товару немає в наявності |