SIR576DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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Технічний опис SIR576DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V.
Інші пропозиції SIR576DP-T1-RE3 за ціною від 39.73 грн до 158.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR576DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET POWSupplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 150 V |
на замовлення 5880 шт: термін постачання 21-31 дні (днів) |
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SIR576DP-T1-RE3 | Vishay |
MOSFETs SOT669 150V 42.2A N-CH MOSFET |
на замовлення 4698 шт: термін постачання 21-30 дні (днів) |
|
| SIR576DP-T1-RE3 |
![]() |
Виробник: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
на замовлення 5880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 136.69 грн |
| 10+ | 89.57 грн |
| 100+ | 60.40 грн |
| 500+ | 44.96 грн |
| 1000+ | 41.19 грн |
| SIR576DP-T1-RE3 |
![]() |
Виробник: Vishay
MOSFETs SOT669 150V 42.2A N-CH MOSFET
MOSFETs SOT669 150V 42.2A N-CH MOSFET
на замовлення 4698 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 158.86 грн |
| 10+ | 101.18 грн |
| 100+ | 59.14 грн |
| 500+ | 47.13 грн |
| 1000+ | 43.22 грн |
| 3000+ | 39.73 грн |



