SIR5808DP-T1-RE3 Vishay / Siliconix
на замовлення 11750 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 126.82 грн |
| 10+ | 94.63 грн |
| 100+ | 58.05 грн |
| 500+ | 50.65 грн |
| 1000+ | 47.11 грн |
| 3000+ | 39.63 грн |
| 6000+ | 39.18 грн |
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Технічний опис SIR5808DP-T1-RE3 Vishay / Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc), Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V.
Інші пропозиції SIR5808DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIR5808DP-T1-RE3 | Виробник : Vishay |
 Trans MOSFET N-CH 80V 18.8A 8-Pin PowerPAK SO EP T/R |
товару немає в наявності |
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SIR5808DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V |
товару немає в наявності |
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SIR5808DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V |
товару немає в наявності |