SIR580DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 3000+ | 55.69 грн |
Відгуки про товар
Написати відгук
Технічний опис SIR580DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Vgs (Max): ±20V.
Інші пропозиції SIR580DP-T1-RE3 за ціною від 56.09 грн до 210.53 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIR580DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V |
на замовлення 13869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SIR580DP-T1-RE3 | Виробник : Vishay / Siliconix |
MOSFETs PPAKSO8 N-CH 80V 35.8A |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| SIR580DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A Technology: TrenchFET® Gate charge: 76nC On-state resistance: 3.2mΩ Power dissipation: 104W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 146A Pulsed drain current: 300A Case: PowerPAK® SO8 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |