SIR584DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
| Кількість | Ціна |
|---|---|
| 3+ | 115.00 грн |
| 10+ | 92.29 грн |
| 100+ | 71.94 грн |
| 500+ | 65.12 грн |
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Технічний опис SIR584DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIR584DP-T1-RE3 за ціною від 48.47 грн до 183.36 грн
| Фото | Назва | Виробник | Інформація |
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SIR584DP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs PPAKSO8 N-CH 80V 24.7A |
на замовлення 3738 шт: термін постачання 21-30 дні (днів) |
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SIR584DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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| SIR584DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 250A Technology: TrenchFET® Gate charge: 56nC On-state resistance: 4.7mΩ Power dissipation: 83.3W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 250A Case: PowerPAK® SO8 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |