SIR606BDP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
| Кількість | Ціна |
|---|---|
| 3000+ | 38.77 грн |
| 6000+ | 35.35 грн |
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Технічний опис SIR606BDP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc).
Інші пропозиції SIR606BDP-T1-RE3 за ціною від 38.27 грн до 135.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR606BDP-T1-RE3 | Vishay / Siliconix |
MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 3887 шт: термін постачання 21-30 дні (днів) |
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SIR606BDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 10.9A PPAK Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
на замовлення 8914 шт: термін постачання 21-31 дні (днів) |
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| SIR606BDP-T1-RE3 |
|
Виробник: Vishay / Siliconix
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
на замовлення 3887 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 106.90 грн |
| 10+ | 86.73 грн |
| 100+ | 58.43 грн |
| 500+ | 49.48 грн |
| 1000+ | 40.39 грн |
| 3000+ | 38.27 грн |
| SIR606BDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Description: MOSFET N-CH 100V 10.9A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
на замовлення 8914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 135.59 грн |
| 10+ | 83.53 грн |
| 100+ | 57.09 грн |
| 500+ | 43.72 грн |
| 1000+ | 39.48 грн |