SIR608DP-T1-RE3 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.05 грн |
| 10+ | 103.21 грн |
| 100+ | 62.96 грн |
| 500+ | 50.26 грн |
| 1000+ | 49.15 грн |
| 3000+ | 42.25 грн |
| 6000+ | 40.94 грн |
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Технічний опис SIR608DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 45V 51A/208A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIR608DP-T1-RE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIR608DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 45V 51A/208A PPAKInput Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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SIR608DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 45V 51A/208A PPAK Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
| SIR608DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 45V 51A/208A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR608DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Description: MOSFET N-CH 45V 51A/208A PPAK
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
товару немає в наявності
В кошику
од. на суму грн.