SIR608DP-T1-RE3 Vishay Semiconductors

Description: MOSFET N-CH 45V 51A/208A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).