SIR608DP-T1-RE3 Vishay Semiconductors
на замовлення 4707 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.5 грн |
| 10+ | 94.43 грн |
| 100+ | 65.23 грн |
| 250+ | 59.88 грн |
| 500+ | 54.34 грн |
| 1000+ | 46.6 грн |
| 3000+ | 44.13 грн |
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Технічний опис SIR608DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 45V 51A/208A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V.
Інші пропозиції SIR608DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIR608DP-T1-RE3 | Виробник : Vishay |
 N-Channel 45 V (D-S) Mosfet |
товар відсутній |
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| SIR608DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIR608DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V |
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SIR608DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V |
товар відсутній |
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| SIR608DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |