SIR610DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 120.6 грн |
10+ | 96.53 грн |
100+ | 76.83 грн |
500+ | 61.01 грн |
1000+ | 51.77 грн |
Відгуки про товар
Написати відгук
Технічний опис SIR610DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc), Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V.
Інші пропозиції SIR610DP-T1-RE3 за ціною від 58.75 грн до 130.07 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIR610DP-T1-RE3 | Виробник : Vishay Semiconductors | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 26219 шт: термін постачання 578-587 дні (днів) |
|
|||||||||||||||||
SIR610DP-T1-RE3 | Виробник : Vishay | N-Channel 200 V (D-S) MOSFET |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
SIR610DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 35.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33.4mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
SIR610DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 35.4A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
товар відсутній |
||||||||||||||||||
SIR610DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 35.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33.4mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |