SiR616DP-T1-GE3 Vishay / Siliconix
на замовлення 12652 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.81 грн |
| 10+ | 83.69 грн |
| 100+ | 56.35 грн |
| 500+ | 47.8 грн |
| 1000+ | 46.07 грн |
| 9000+ | 45.2 грн |
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Технічний опис SiR616DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V.
Інші пропозиції SiR616DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIR616DP-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SIR616DP-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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| SiR616DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20.2A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 53.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SiR616DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 20.2A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
товар відсутній |
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SiR616DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 20.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
товар відсутній |
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| SiR616DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20.2A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 53.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |