SIR624DP-T1-RE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 3+ | 130.06 грн |
| 10+ | 81.73 грн |
| 100+ | 47.59 грн |
| 500+ | 37.55 грн |
| 1000+ | 34.35 грн |
| 3000+ | 30.17 грн |
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Технічний опис SIR624DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V.
Інші пропозиції SIR624DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SIR624DP-T1-RE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 200V 5.7A/18.6A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
товару немає в наявності |
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SIR624DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V |
товару немає в наявності |