SIR624DP-T1-RE3 Vishay / Siliconix
на замовлення 5980 шт:
термін постачання 1026-1035 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.13 грн |
| 10+ | 67.32 грн |
| 100+ | 45.55 грн |
| 500+ | 38.56 грн |
| 1000+ | 31.43 грн |
| 3000+ | 30.1 грн |
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Технічний опис SIR624DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V.
Інші пропозиції SIR624DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIR624DP-T1-RE3 | Виробник : Vishay |
 SIR624DP-T1-RE3 |
товар відсутній |
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| SIR624DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIR624DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
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SIR624DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
товар відсутній |
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| SIR624DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |