Технічний опис SIR624DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V.
Інші пропозиції SIR624DP-T1-RE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SIR624DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 200V 5.7A/18.6A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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SIR624DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIR624DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 18.6 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 52 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: ThunderFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.05 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: Lead (19-Jan-2021) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SIR624DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage SVHC: Lead (19-Jan-2021) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIR624DP-T1-RE3 | Vishay |
N-CHANNEL 200-V (D-S) MOSFET |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SIR624DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR624DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| SIR624DP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 18.6
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 52
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8
Produktpalette: ThunderFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.05
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: Lead (19-Jan-2021)
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 18.6
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 52
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8
Produktpalette: ThunderFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.05
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: Lead (19-Jan-2021)
товару немає в наявності
В кошику
од. на суму грн.
| SIR624DP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage
SVHC: Lead (19-Jan-2021)
Description: VISHAY - SIR624DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 18.6 A, 0.05 ohm, PowerPAK SO, Oberflächenmontage
SVHC: Lead (19-Jan-2021)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| SIR624DP-T1-RE3 |
|
Виробник: Vishay
N-CHANNEL 200-V (D-S) MOSFET
N-CHANNEL 200-V (D-S) MOSFET
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.