SIR626LDP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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Технічний опис SIR626LDP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V.
Інші пропозиції SIR626LDP-T1-RE3 за ціною від 60.68 грн до 207.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR626LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 135nC On-state resistance: 2.1mΩ Power dissipation: 104W Gate-source voltage: ±20V Drain current: 186A Drain-source voltage: 60V Pulsed drain current: 400A Kind of package: reel; tape Case: PowerPAK® SO8 |
на замовлення 1647 шт: термін постачання 14-30 дні (днів) |
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SIR626LDP-T1-RE3 | Vishay / Siliconix |
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8 |
на замовлення 22651 шт: термін постачання 21-30 дні (днів) |
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SIR626LDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 45.6A/186A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
на замовлення 3358 шт: термін постачання 21-31 дні (днів) |
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| SIR626LDP-T1-RE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 135nC
On-state resistance: 2.1mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 186A
Drain-source voltage: 60V
Pulsed drain current: 400A
Kind of package: reel; tape
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 135nC
On-state resistance: 2.1mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 186A
Drain-source voltage: 60V
Pulsed drain current: 400A
Kind of package: reel; tape
Case: PowerPAK® SO8
на замовлення 1647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 128.53 грн |
| 10+ | 85.73 грн |
| 100+ | 67.24 грн |
| SIR626LDP-T1-RE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8
на замовлення 22651 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.85 грн |
| 10+ | 132.50 грн |
| 100+ | 79.60 грн |
| 500+ | 67.87 грн |
| 1000+ | 64.87 грн |
| 3000+ | 60.68 грн |
| SIR626LDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
на замовлення 3358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 207.39 грн |
| 10+ | 129.51 грн |
| 100+ | 89.32 грн |
| 500+ | 67.71 грн |
| 1000+ | 64.79 грн |