SIR626LDP-T1-UE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 219.06 грн |
| 10+ | 140.72 грн |
| 100+ | 84.39 грн |
| 500+ | 70.18 грн |
| 1000+ | 67.16 грн |
| 3000+ | 61.11 грн |
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Технічний опис SIR626LDP-T1-UE3 Vishay / Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V.
Інші пропозиції SIR626LDP-T1-UE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIR626LDP-T1-UE3 | Виробник : Vishay Siliconix |
 Description: N-CHANNEL 60-V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
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