SiR632DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 29A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Power Dissipation (Max): 69.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
| Кількість | Ціна |
|---|---|
| 3000+ | 38.77 грн |
| 6000+ | 34.86 грн |
| 9000+ | 33.60 грн |
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Технічний опис SiR632DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 150V 29A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V, Power Dissipation (Max): 69.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V.
Інші пропозиції SiR632DP-T1-RE3 за ціною від 37.21 грн до 140.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SiR632DP-T1-RE3 | Vishay Semiconductors |
MOSFET 150V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 7721 шт: термін постачання 21-30 дні (днів) |
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SiR632DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 29A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V Power Dissipation (Max): 69.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V |
на замовлення 10252 шт: термін постачання 21-31 дні (днів) |
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| SiR632DP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
на замовлення 7721 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 118.41 грн |
| 10+ | 89.16 грн |
| 100+ | 73.30 грн |
| 6000+ | 38.27 грн |
| 9000+ | 37.21 грн |
| SiR632DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 29A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Power Dissipation (Max): 69.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
Description: MOSFET N-CH 150V 29A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Power Dissipation (Max): 69.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
на замовлення 10252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 86.28 грн |
| 100+ | 58.16 грн |
| 500+ | 43.28 грн |
| 1000+ | 39.65 грн |