Інші пропозиції SIR638ADP-T1-RE3 транзистор за ціною від 51.03 грн до 160.96 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR638ADP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 100A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SIR638ADP-T1-RE3 | Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 8346 шт: термін постачання 21-30 дні (днів) |
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SIR638ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 100A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V |
на замовлення 15766 шт: термін постачання 21-31 дні (днів) |
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| SIR638ADP-T1-RE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 100A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 53.72 грн |
| 6000+ | 51.11 грн |
| SIR638ADP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
на замовлення 8346 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 132.39 грн |
| 10+ | 108.61 грн |
| 100+ | 75.42 грн |
| 250+ | 71.89 грн |
| 500+ | 62.80 грн |
| 1000+ | 53.85 грн |
| 3000+ | 51.03 грн |
| SIR638ADP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V
Description: MOSFET N-CH 40V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V
на замовлення 15766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 160.96 грн |
| 10+ | 111.33 грн |
| 100+ | 78.53 грн |
| 500+ | 59.15 грн |
| 1000+ | 54.48 грн |