SIR680ADP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
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Технічний опис SIR680ADP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 125A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3.5V, Verlustleistung: 104W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2880µohm.
Інші пропозиції SIR680ADP-T1-RE3 за ціною від 70.35 грн до 273.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR680ADP-T1-RE3 | VISHAY |
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 125A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 104W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2880µohm |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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SIR680ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30.7A/125A PPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 |
на замовлення 7503 шт: термін постачання 21-31 дні (днів) |
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SIR680ADP-T1-RE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 80V PowerPAK SO-8 |
на замовлення 1264 шт: термін постачання 21-30 дні (днів) |
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SIR680ADP-T1-RE3 | VISHAY |
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 125A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 104W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2880µohm |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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| SIR680ADP-T1-RE3 |
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Виробник: VISHAY
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 125A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2880µohm
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 125A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2880µohm
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 124.17 грн |
| 500+ | 95.45 грн |
| 1000+ | 84.58 грн |
| SIR680ADP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
на замовлення 7503 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 195.85 грн |
| 10+ | 140.34 грн |
| 100+ | 100.15 грн |
| 500+ | 76.09 грн |
| 1000+ | 70.35 грн |
| SIR680ADP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N-CHANNEL 80V PowerPAK SO-8
MOSFETs N-CHANNEL 80V PowerPAK SO-8
на замовлення 1264 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 249.16 грн |
| 10+ | 159.68 грн |
| 100+ | 96.56 грн |
| 500+ | 78.94 грн |
| 1000+ | 76.83 грн |
| 3000+ | 73.30 грн |
| SIR680ADP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 125A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2880µohm
Description: VISHAY - SIR680ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 125 A, 2880 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 125A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2880µohm
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 273.82 грн |
| 10+ | 178.44 грн |
| 100+ | 124.17 грн |
| 500+ | 95.45 грн |
| 1000+ | 84.58 грн |