SiR680DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 3000+ | 75.32 грн |
| 6000+ | 70.50 грн |
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Технічний опис SiR680DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 80V 100A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V.
Інші пропозиції SiR680DP-T1-RE3 за ціною від 76.11 грн до 256.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SiR680DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 100A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V |
на замовлення 14210 шт: термін постачання 21-31 дні (днів) |
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SiR680DP-T1-RE3 | Vishay / Siliconix |
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 11368 шт: термін постачання 21-30 дні (днів) |
|
| SiR680DP-T1-RE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Description: MOSFET N-CH 80V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
на замовлення 14210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 244.31 грн |
| 10+ | 153.56 грн |
| 100+ | 106.97 грн |
| 500+ | 81.69 грн |
| 1000+ | 80.99 грн |
| SiR680DP-T1-RE3 |
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Виробник: Vishay / Siliconix
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
на замовлення 11368 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 256.62 грн |
| 10+ | 165.42 грн |
| 100+ | 100.55 грн |
| 500+ | 81.70 грн |
| 1000+ | 81.00 грн |
| 3000+ | 76.11 грн |



