на замовлення 10505 шт:
термін постачання 329-338 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.14 грн |
| 10+ | 146.64 грн |
| 100+ | 101.48 грн |
| 250+ | 93.47 грн |
| 500+ | 84.79 грн |
| 1000+ | 72.77 грн |
| 3000+ | 72.1 грн |
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Технічний опис SIR681DP-T1-RE3 Vishay / Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V.
Інші пропозиції SIR681DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIR681DP-T1-RE3 | Виробник : Vishay |
 Trans MOSFET P-CH 80V 17.6A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SIR681DP-T1-RE3 | Виробник : Vishay |
Trans MOSFET P-CH 80V 17.6A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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| SIR681DP-T1-RE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -71.9A Pulsed drain current: -125A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIR681DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V |
товар відсутній |
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SIR681DP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V |
товар відсутній |
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| SIR681DP-T1-RE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -71.9A Pulsed drain current: -125A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |