SIR800DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V.