SIR826ADP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 3000+ | 72.54 грн |
| 6000+ | 67.36 грн |
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Технічний опис SIR826ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V.
Інші пропозиції SIR826ADP-T1-GE3 за ціною від 71.89 грн до 246.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR826ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V |
на замовлення 9120 шт: термін постачання 21-31 дні (днів) |
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SIR826ADP-T1-GE3 | Vishay Semiconductors |
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 2528 шт: термін постачання 21-30 дні (днів) |
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| SIR826ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
на замовлення 9120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 237.88 грн |
| 10+ | 149.12 грн |
| 100+ | 103.51 грн |
| 500+ | 78.87 грн |
| 1000+ | 77.37 грн |
| SIR826ADP-T1-GE3 |
![]() |
Виробник: Vishay Semiconductors
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
на замовлення 2528 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 246.69 грн |
| 10+ | 158.06 грн |
| 100+ | 95.86 грн |
| 500+ | 77.53 грн |
| 1000+ | 76.12 грн |
| 3000+ | 71.89 грн |



