| Кількість | Ціна |
|---|---|
| 2+ | 209.69 грн |
| 10+ | 171.84 грн |
| 100+ | 118.41 грн |
| 250+ | 109.25 грн |
| 500+ | 99.38 грн |
| 1000+ | 85.28 грн |
| 3000+ | 81.05 грн |
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Технічний опис SIR872DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 150V 53.7A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V.
Інші пропозиції SIR872DP-T1-GE3 за ціною від 86.79 грн до 241.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR872DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 150V 53.7A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V |
на замовлення 1571 шт: термін постачання 21-31 дні (днів) |
|
| SIR872DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
на замовлення 1571 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 241.84 грн |
| 10+ | 152.03 грн |
| 100+ | 106.11 грн |
| 500+ | 86.79 грн |