SIR873DP-T1-GE3 Vishay Semiconductors
на замовлення 16402 шт:
термін постачання 570-579 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.94 грн |
| 10+ | 92.9 грн |
| 100+ | 63.96 грн |
| 250+ | 59.42 грн |
| 500+ | 53.88 грн |
| 1000+ | 46.2 грн |
| 3000+ | 43.93 грн |
Відгуки про товар
Написати відгук
Технічний опис SIR873DP-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 150V 37A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V.
Інші пропозиції SIR873DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIR873DP-T1-GE3 | Виробник : Vishay |
 Trans MOSFET P-CH 150V 37A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
|
 |
SIR873DP-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 150V 37A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
|
| SIR873DP-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -37A; Idm: 50A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -37A Pulsed drain current: 50A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 47.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||
 |
SIR873DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 150V 37A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V |
товар відсутній |
|
|
|
SIR873DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 150V 37A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V |
товар відсутній |
|
| SIR873DP-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -37A; Idm: 50A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -37A Pulsed drain current: 50A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 47.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |