SIR882BDP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
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Технічний опис SIR882BDP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V.
Інші пропозиції SIR882BDP-T1-RE3 за ціною від 40.67 грн до 128.45 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIR882BDP-T1-RE3 | Vishay / Siliconix |
MOSFETs SO8 100V 67.5A N-CH |
на замовлення 27854 шт: термін постачання 21-30 дні (днів) |
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SIR882BDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 16.5/67.5A PPAK Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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| SIR882BDP-T1-RE3 |
|
Виробник: Vishay / Siliconix
MOSFETs SO8 100V 67.5A N-CH
MOSFETs SO8 100V 67.5A N-CH
на замовлення 27854 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.17 грн |
| 10+ | 94.83 грн |
| 100+ | 56.53 грн |
| 500+ | 45.11 грн |
| 1000+ | 42.22 грн |
| 3000+ | 40.67 грн |
| SIR882BDP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 128.45 грн |
| 10+ | 94.30 грн |
| 100+ | 67.90 грн |
| 500+ | 50.77 грн |
| 1000+ | 46.61 грн |