SIRA20DP-T1-RE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 3+ | 127.90 грн |
| 10+ | 93.95 грн |
| 100+ | 55.16 грн |
| 500+ | 52.65 грн |
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Технічний опис SIRA20DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 25V 81.7A/100A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIRA20DP-T1-RE3 за ціною від 42.68 грн до 143.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIRA20DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 25V 81.7A/100A PPAKInput Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
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| SIRA20DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 143.76 грн |
| 10+ | 88.51 грн |
| 100+ | 60.00 грн |
| 500+ | 44.84 грн |
| 1000+ | 42.68 грн |