SIRA50ADP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 54.8A/219A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 3000+ | 45.18 грн |
| 6000+ | 42.29 грн |
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Технічний опис SIRA50ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 40V 54.8A/219A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc), Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V.
Інші пропозиції SIRA50ADP-T1-RE3 за ціною від 48.58 грн до 174.33 грн
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SIRA50ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 54.8A/219A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V |
на замовлення 9356 шт: термін постачання 21-31 дні (днів) |
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SIRA50ADP-T1-RE3 | Vishay Semiconductors |
MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 |
на замовлення 6559 шт: термін постачання 21-30 дні (днів) |
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| SIRA50ADP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 54.8A/219A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V
Description: MOSFET N-CH 40V 54.8A/219A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V
на замовлення 9356 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.59 грн |
| 10+ | 97.89 грн |
| 100+ | 66.63 грн |
| 500+ | 49.98 грн |
| 1000+ | 48.58 грн |
| SIRA50ADP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8
MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8
на замовлення 6559 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 174.33 грн |
| 10+ | 111.05 грн |
| 100+ | 66.04 грн |
| 500+ | 57.37 грн |