SIRA52ADP-T1-RE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Technology: TrenchFET®
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.10 грн |
| 6+ | 82.11 грн |
| 10+ | 75.34 грн |
| 25+ | 66.03 грн |
| 100+ | 61.80 грн |
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Технічний опис SIRA52ADP-T1-RE3 VISHAY
Description: MOSFET N-CH 40V 41.6A/131A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc), Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V.
Інші пропозиції SIRA52ADP-T1-RE3 за ціною від 76.26 грн до 113.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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SIRA52ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 41.6A/131A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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SIRA52ADP-T1-RE3 | Vishay Semiconductors |
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8 |
на замовлення 2136 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SIRA52ADP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
Description: MOSFET N-CH 40V 41.6A/131A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.93 грн |
| 10+ | 97.82 грн |
| 100+ | 76.26 грн |
| SIRA52ADP-T1-RE3 |
|
Виробник: Vishay Semiconductors
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
на замовлення 2136 шт:
термін постачання 21-30 дні (днів)