SIRA60DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 3000+ | 42.79 грн |
| 6000+ | 39.25 грн |
| 9000+ | 37.43 грн |
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Технічний опис SIRA60DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V.
Інші пропозиції SIRA60DP-T1-GE3 за ціною від 38.82 грн до 103.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIRA60DP-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 12881 шт: термін постачання 21-30 дні (днів) |
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SIRA60DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 100A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V |
на замовлення 10078 шт: термін постачання 21-31 дні (днів) |
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| SIRA60DP-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8
на замовлення 12881 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.87 грн |
| 10+ | 75.40 грн |
| 100+ | 54.95 грн |
| 500+ | 50.00 грн |
| 1000+ | 40.71 грн |
| 3000+ | 38.82 грн |
| SIRA60DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
на замовлення 10078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.69 грн |
| 10+ | 81.47 грн |
| 100+ | 63.40 грн |
| 500+ | 50.43 грн |
| 1000+ | 41.08 грн |